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NGD8201NT4

NGD8201NT4

NGD8201NT4

ON Semiconductor

NGD8201NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGD8201NT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn80Pb20)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 400V
Max Power Dissipation125W
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating20A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number NGD8201N
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Rise Time-Max 14000ns
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation125W
Case Connection COLLECTOR
Input Type Logic
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 20A
Collector Emitter Breakdown Voltage440V
Turn On Time6500 ns
Test Condition 300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff) 18500 ns
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C -/5μs
Gate-Emitter Voltage-Max 15V
Fall Time-Max (tf) 7000ns
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:4782 items

NGD8201NT4 Product Details

NGD8201NT4 Description


NGD8201NT4 is a type of logic-level insulated gate bipolar transistor (IGBT) developed by ON Semiconductor. Its monolithic circuitry used in inductive coil driver applications is able to provide ESD and Overvoltage clamped protection. It is well suited for ignition, direct fuel injection, and applications requiring high voltage and high current switching.



NGD8201NT4 Features


Low saturation voltage

High pulsed current capability

Integrated ESD diode protection

Gate?emitter ESD protection

Package: DPAK



NGD8201NT4 Applications


Ignition systems


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