2SC5824T100Q Overview
In this device, the DC current gain is 120 @ 100mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 500V, it allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A constant collector voltage of 3A is necessary for high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 60V volts.During maximum operation, collector current can be as low as 3A volts.
2SC5824T100Q Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of 500V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 200MHz
2SC5824T100Q Applications
There are a lot of ROHM Semiconductor 2SC5824T100Q applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
