PBSS303ND,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 345 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 515mV @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.140MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 60V volts.In extreme cases, the collector current can be as low as 3A volts.
PBSS303ND,115 Features
the DC current gain for this device is 345 @ 500mA 2V
the vce saturation(Max) is 515mV @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS303ND,115 Applications
There are a lot of Nexperia USA Inc. PBSS303ND,115 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
