2SC6095-TD-E Overview
In this device, the DC current gain is 300 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 100mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 150mV @ 50mA, 1A.If the emitter base voltage is kept at 6.5V, a high level of efficiency can be achieved.A transition frequency of 350MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 2.5A volts at Single BJT transistors maximum.
2SC6095-TD-E Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 150mV @ 50mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 350MHz
2SC6095-TD-E Applications
There are a lot of ON Semiconductor 2SC6095-TD-E applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
