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TIP126G

TIP126G

TIP126G

ON Semiconductor

TIP126G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TIP126G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation2W
Peak Reflow Temperature (Cel) 260
Current Rating-5A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number TIP12*
Pin Count3
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation65W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product4MHz
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 4V @ 20mA, 5A
Collector Emitter Breakdown Voltage80V
Collector Emitter Saturation Voltage2V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Continuous Collector Current 5A
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8930 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.75000$0.75
50$0.62200$31.1
100$0.50770$50.77
500$0.40132$200.66

TIP126G Product Details

TIP126G Overview


In this device, the DC current gain is 1000 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 20mA, 5A.In order to achieve high efficiency, the continuous collector voltage should be kept at 5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).Maximum collector currents can be below 5A volts.

TIP126G Features


the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -5A

TIP126G Applications


There are a lot of ON Semiconductor TIP126G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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