SMBT2907AE6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.A maximum collector current of 600mA volts is possible.
SMBT2907AE6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
SMBT2907AE6327HTSA1 Applications
There are a lot of Infineon Technologies SMBT2907AE6327HTSA1 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
