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2SC5663T2L

2SC5663T2L

2SC5663T2L

ROHM Semiconductor

2SC5663T2L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC5663T2L Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 12V
Max Power Dissipation150mW
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating500mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC5663
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation150mW
Transistor Application SWITCHING
Gain Bandwidth Product320MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 10mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage12V
Transition Frequency 320MHz
Collector Emitter Saturation Voltage90mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Continuous Collector Current 500mA
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:13414 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.167921$0.167921
10$0.158416$1.58416
100$0.149449$14.9449
500$0.140989$70.4945
1000$0.133009$133.009

2SC5663T2L Product Details

2SC5663T2L Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 10mA 2V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 90mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A 500mA continuous collector voltage is necessary to achieve high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 320MHz is present in the part.This device can take an input voltage of 12V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

2SC5663T2L Features


the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 320MHz

2SC5663T2L Applications


There are a lot of ROHM Semiconductor 2SC5663T2L applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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