PBSS5130T,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 260 @ 500mA 2V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 225mV @ 50mA, 1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 200MHz is present in the part.Input voltage breakdown is available at 30V volts.Maximum collector currents can be below 1A volts.
PBSS5130T,215 Features
the DC current gain for this device is 260 @ 500mA 2V
the vce saturation(Max) is 225mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
PBSS5130T,215 Applications
There are a lot of Nexperia USA Inc. PBSS5130T,215 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
