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BC858A RFG

BC858A RFG

BC858A RFG

Taiwan Semiconductor Corporation

BC858A RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC858A RFG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:270345 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.301417$0.301417
10$0.284355$2.84355
100$0.268260$26.826
500$0.253076$126.538
1000$0.238750$238.75

BC858A RFG Product Details

BC858A RFG Overview


In this device, the DC current gain is 125 @ 2mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor comes in a supplier device package of SOT-23.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BC858A RFG Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of SOT-23

BC858A RFG Applications


There are a lot of Taiwan Semiconductor Corporation BC858A RFG applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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