ZTX757 Overview
In this device, the DC current gain is 50 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.Parts of this part have transition frequencies of 30MHz.Collector current can be as low as 500mA volts at its maximum.
ZTX757 Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 30MHz
ZTX757 Applications
There are a lot of Diodes Incorporated ZTX757 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
