DSS20201L-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 100mV.When VCE saturation is 100mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.As you can see, the part has a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 20V volts.A maximum collector current of 2A volts can be achieved.
DSS20201L-7 Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 100mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
DSS20201L-7 Applications
There are a lot of Diodes Incorporated DSS20201L-7 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
