BCX5216E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.This device can take an input voltage of 60V volts before it breaks down.When collector current reaches its maximum, it can reach 1A volts.
BCX5216E6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCX5216E6327HTSA1 Applications
There are a lot of Infineon Technologies BCX5216E6327HTSA1 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
