2SAR502U3HZGT106 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 10mA, 200mA.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
2SAR502U3HZGT106 Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 10mA, 200mA
2SAR502U3HZGT106 Applications
There are a lot of ROHM Semiconductor 2SAR502U3HZGT106 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
