NZT45H8 Overview
In this device, the DC current gain is 40 @ 4A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.The breakdown input voltage is 60V volts.The maximum collector current is 8A volts.
NZT45H8 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
NZT45H8 Applications
There are a lot of ON Semiconductor NZT45H8 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
