BC856,215 Overview
In this device, the DC current gain is 125 @ 2mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 650mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In the part, the transition frequency is 100MHz.Breakdown input voltage is 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC856,215 Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856,215 Applications
There are a lot of Nexperia USA Inc. BC856,215 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
