2SA2202-TD-E Overview
This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -120mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 240mV @ 100mA, 1A.The base voltage of the emitter can be kept at -7V to achieve high efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 2A volts.
2SA2202-TD-E Features
the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 240mV @ 100mA, 1A
the emitter base voltage is kept at -7V
a transition frequency of 300MHz
2SA2202-TD-E Applications
There are a lot of ON Semiconductor 2SA2202-TD-E applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
