MMBT4403-G Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of -400mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 15mA, 150mA.A -600mA continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Collector current can be as low as 600mA volts at its maximum.
MMBT4403-G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
MMBT4403-G Applications
There are a lot of Comchip Technology MMBT4403-G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
