DNLS350Y-13 Overview
In this device, the DC current gain is 300 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 370mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The part has a transition frequency of 100MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 3A volts can be achieved.
DNLS350Y-13 Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 370mV
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DNLS350Y-13 Applications
There are a lot of Diodes Incorporated DNLS350Y-13 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
