2SB1705TL Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 500mA 2V.A collector emitter saturation voltage of -120mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 30mA, 1.5A.Continuous collector voltage should be kept at -3A for high efficiency.The emitter base voltage can be kept at -6V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.In the part, the transition frequency is 280MHz.There is a breakdown input voltage of 12V volts that it can take.In extreme cases, the collector current can be as low as 3A volts.
2SB1705TL Features
the DC current gain for this device is 270 @ 500mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 280MHz
2SB1705TL Applications
There are a lot of ROHM Semiconductor 2SB1705TL applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
