BC859CLT1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.A transition frequency of 100MHz is present in the part.In extreme cases, the collector current can be as low as 100mA volts.
BC859CLT1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC859CLT1 Applications
There are a lot of ON Semiconductor BC859CLT1 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
