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2N2218A PBFREE

2N2218A PBFREE

2N2218A PBFREE

Central Semiconductor Corp

2N2218A PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N2218A PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 34 Weeks
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Operating Temperature-65°C~200°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 800mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 250MHz
RoHS StatusROHS3 Compliant
In-Stock:3686 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.12000$2.12
500$2.0988$1049.4
1000$2.0776$2077.6
1500$2.0564$3084.6
2000$2.0352$4070.4
2500$2.014$5035

2N2218A PBFREE Product Details

2N2218A PBFREE Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.

2N2218A PBFREE Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA

2N2218A PBFREE Applications


There are a lot of Central Semiconductor Corp 2N2218A PBFREE applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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