KSB798GTF Overview
This device has a DC current gain of 200 @ 100mA 1V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 100mA, 1A.The part has a transition frequency of 110MHz.This device displays a 25V maximum voltage - Collector Emitter Breakdown.
KSB798GTF Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 400mV @ 100mA, 1A
a transition frequency of 110MHz
KSB798GTF Applications
There are a lot of Rochester Electronics, LLC KSB798GTF applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
