PBSS5612PA,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 190 @ 2A 2V DC current gain.A VCE saturation (Max) of 300mV @ 300mA, 6A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at -7V to achieve high efficiency.As you can see, the part has a transition frequency of 60MHz.Single BJT transistor can be broken down at a voltage of 12V volts.A maximum collector current of 6A volts is possible.
PBSS5612PA,115 Features
the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 300mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 60MHz
PBSS5612PA,115 Applications
There are a lot of Nexperia USA Inc. PBSS5612PA,115 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
