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JANTX2N2905A

JANTX2N2905A

JANTX2N2905A

Microsemi Corporation

JANTX2N2905A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N2905A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact PlatingLead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/290
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation800mW
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation600mW
Case Connection COLLECTOR
Power - Max 800mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Turn On Time-Max (ton) 45ns
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1469 items

Pricing & Ordering

QuantityUnit PriceExt. Price
148$6.58507$974.59036

JANTX2N2905A Product Details

JANTX2N2905A Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As a result, the part has a transition frequency of 200MHz.A maximum collector current of 600mA volts is possible.

JANTX2N2905A Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

JANTX2N2905A Applications


There are a lot of Microsemi Corporation JANTX2N2905A applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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