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STD1802T4

STD1802T4

STD1802T4

STMicroelectronics

STD1802T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

STD1802T4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingCut Tape (CT)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Max Power Dissipation15W
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STD18
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Power Dissipation15W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 150mA, 3A
Collector Emitter Breakdown Voltage60V
Transition Frequency 150MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:8404 items

Pricing & Ordering

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STD1802T4 Product Details

STD1802T4 Overview


DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.When VCE saturation is 400mV @ 150mA, 3A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a transition frequency of 150MHz in the part.Single BJT transistor can take a breakdown input voltage of 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

STD1802T4 Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

STD1802T4 Applications


There are a lot of STMicroelectronics STD1802T4 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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