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BCX70HE6327HTSA1

BCX70HE6327HTSA1

BCX70HE6327HTSA1

Infineon Technologies

BCX70HE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCX70HE6327HTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCX70
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 330mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
RoHS StatusROHS3 Compliant
In-Stock:140253 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.401274$0.401274
10$0.378560$3.7856
100$0.357132$35.7132
500$0.336917$168.4585
1000$0.317846$317.846

BCX70HE6327HTSA1 Product Details

BCX70HE6327HTSA1 Overview


This device has a DC current gain of 180 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.This device displays a 45V maximum voltage - Collector Emitter Breakdown.

BCX70HE6327HTSA1 Features


the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
a transition frequency of 250MHz

BCX70HE6327HTSA1 Applications


There are a lot of Infineon Technologies BCX70HE6327HTSA1 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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