2N5830 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 5mA, 50mA.There is a 100V maximal voltage in the device due to collector-emitter breakdown.
2N5830 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
2N5830 Applications
There are a lot of Rochester Electronics, LLC 2N5830 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
