2SD1816S-TL-E Overview
In this device, the DC current gain is 140 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 200mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.In extreme cases, the collector current can be as low as 4A volts.
2SD1816S-TL-E Features
the DC current gain for this device is 140 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816S-TL-E Applications
There are a lot of ON Semiconductor 2SD1816S-TL-E applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
