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ZXTN4006ZTA

ZXTN4006ZTA

ZXTN4006ZTA

Diodes Incorporated

ZXTN4006ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN4006ZTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation1.5W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTN4006
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 320mV
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage200V
Max Breakdown Voltage 200V
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 1A
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:18082 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.058391$0.058391
500$0.042934$21.467
1000$0.035779$35.779
2000$0.032825$65.65
5000$0.030677$153.385
10000$0.028536$285.36
15000$0.027598$413.97
50000$0.027137$1356.85

ZXTN4006ZTA Product Details

ZXTN4006ZTA Overview


This device has a DC current gain of 100 @ 150mA 320mV, which is the ratio between the base current and the collector current.A constant collector voltage of 1A is necessary for high efficiency.The emitter base voltage can be kept at 7V for high efficiency.There is a breakdown input voltage of 200V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

ZXTN4006ZTA Features


the DC current gain for this device is 100 @ 150mA 320mV
the emitter base voltage is kept at 7V

ZXTN4006ZTA Applications


There are a lot of Diodes Incorporated ZXTN4006ZTA applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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