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CP527-2N6299-CT5

CP527-2N6299-CT5

CP527-2N6299-CT5

Central Semiconductor Corp

CP527-2N6299-CT5 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CP527-2N6299-CT5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-65°C~150°C TJ
PackagingTray
Published 2013
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 4A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 3V @ 80mA, 8A
Collector Emitter Breakdown Voltage80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 4MHz
RoHS StatusROHS3 Compliant
In-Stock:122 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$77.96000$77.96
10$73.23800$732.38

CP527-2N6299-CT5 Product Details

CP527-2N6299-CT5 Overview


This device has a DC current gain of 750 @ 4A 3V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 80mA, 8A.This product comes in a Die device package from the supplier.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.In extreme cases, the collector current can be as low as 8A volts.

CP527-2N6299-CT5 Features


the DC current gain for this device is 750 @ 4A 3V
the vce saturation(Max) is 3V @ 80mA, 8A
the supplier device package of Die

CP527-2N6299-CT5 Applications


There are a lot of Central Semiconductor Corp CP527-2N6299-CT5 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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