Welcome to Hotenda.com Online Store!

logo
userjoin
Home

ZTX458

ZTX458

ZTX458

Diodes Incorporated

ZTX458 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX458 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingBulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation1W
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Current Rating300mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX458
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Gain Bandwidth Product50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 6mA, 50mA
Collector Emitter Breakdown Voltage400V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 300mA
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10036 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.67000$0.67
10$0.57900$5.79
100$0.43960$43.96
500$0.35140$175.7

ZTX458 Product Details

ZTX458 Overview


In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation (Max) of 500mV @ 6mA, 50mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 300mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.A maximum collector current of 300mA volts can be achieved.

ZTX458 Features


the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz

ZTX458 Applications


There are a lot of Diodes Incorporated ZTX458 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

Get Subscriber

Enter Your Email Address, Get the Latest News