SMMBT2222ALT3G Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Parts of this part have transition frequencies of 300MHz.In extreme cases, the collector current can be as low as 1.1A volts.
SMMBT2222ALT3G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
SMMBT2222ALT3G Applications
There are a lot of ON Semiconductor SMMBT2222ALT3G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
