TTA0002(Q) Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 1A 5V.As it features a collector emitter saturation voltage of -2V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 900mA, 9A.With the emitter base voltage set at -5V, an efficient operation can be achieved.A maximum collector current of 18A volts can be achieved.
TTA0002(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 900mA, 9A
the emitter base voltage is kept at -5V
TTA0002(Q) Applications
There are a lot of Toshiba Semiconductor and Storage TTA0002(Q) applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
