PBSS8110X,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 250mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A breakdown input voltage of 100V volts can be used.SOT-89 is the supplier device package for this product.The device exhibits a collector-emitter breakdown at 100V.A maximum collector current of 1A volts is possible.
PBSS8110X,135 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of SOT-89
PBSS8110X,135 Applications
There are a lot of Nexperia USA Inc. PBSS8110X,135 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
