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MJE4343G

MJE4343G

MJE4343G

ON Semiconductor

MJE4343G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE4343G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 160V
Max Power Dissipation125W
Peak Reflow Temperature (Cel) 260
Current Rating16A
Frequency 1MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation125W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product1MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 8A 2V
Current - Collector Cutoff (Max) 750μA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 2A, 16A
Collector Emitter Breakdown Voltage160V
Transition Frequency 1MHz
Collector Emitter Saturation Voltage3.5V
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 7V
hFE Min 15
Height 16.2mm
Length 15.2mm
Width 4.9mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1306 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$16.575040$16.57504
10$15.636830$156.3683
100$14.751727$1475.1727
500$13.916723$6958.3615
1000$13.128984$13128.984

MJE4343G Product Details

MJE4343G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 8A 2V.The collector emitter saturation voltage is 3.5V, giving you a wide variety of design options.When VCE saturation is 3.5V @ 2A, 16A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 16A.The part has a transition frequency of 1MHz.Collector current can be as low as 16A volts at its maximum.

MJE4343G Features


the DC current gain for this device is 15 @ 8A 2V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 2A, 16A
the emitter base voltage is kept at 7V
the current rating of this device is 16A
a transition frequency of 1MHz

MJE4343G Applications


There are a lot of ON Semiconductor MJE4343G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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