2N6052G Overview
In this device, the DC current gain is 750 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.A VCE saturation (Max) of 3V @ 120mA, 12A means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 12A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -12A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 4MHz.In extreme cases, the collector current can be as low as 12A volts.
2N6052G Features
the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
the current rating of this device is -12A
a transition frequency of 4MHz
2N6052G Applications
There are a lot of ON Semiconductor 2N6052G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting