IKW30N65H5XKSA1 Description
A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.
IKW30N65H5XKSA1 Features
High speed H5 technology offering
·Best-in-Class efficiencyin hard switching and resonant topologies
·Plug and play replacement of previousgenerationIGBTs+650V breakdown voltage·Low gate charge QG
·IGBT copacked with RAPID 1 fast and soft antiparallel diode·Maximumjunction temperature175°℃
·Qualified according to JEDEC for target applications·Pb-free lead plating: RoHS compliant
·Complete product spectrum and PSpice Models
IKW30N65H5XKSA1 Applications
·Solar converters
·Uninterruptible power supplies·Welding converters
·Mid to high range switchingfrequency converters
