IGP50N60TXKSA1 Description
The IGP50N60TXKSA1 is a Low Loss IGBT: IGBT in TRENCHSTOP? and Fieldstop technology. A selection of Infineon IGBT Transistors with TrenchStop? technology and collector-emitter voltage levels of 600 and 650V. The product line consists of gadgets with an anti-parallel diode with high speed and quick recovery built in.
IGP50N60TXKSA1 Features
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5 μs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP? and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
IGP50N60TXKSA1 Applications
Power Management
Alternative Energy
Consumer Electronics
HVAC
Industrial
