SGR20N40LTF Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications.
SGR20N40LTF Features
High input impedance
High peak current capability (150A)
Easy gate drive
Surface Mount: SGR20N40L
Straight Lead: SGU20N40L
SGR20N40LTF Applications
Strobe flash
