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NVTJD4001NT1G

NVTJD4001NT1G

NVTJD4001NT1G

ON Semiconductor

NVTJD4001NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NVTJD4001NT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface MountYES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation272mW
Terminal FormGULL WING
Pin Count6
Reference Standard AEC-Q101
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Turn On Delay Time17 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 33pF @ 5V
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 5V
Rise Time23ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 82 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.25A
Drain-source On Resistance-Max 2.5Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 12 pF
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:12300 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.604445$0.604445
10$0.570231$5.70231
100$0.537954$53.7954
500$0.507503$253.7515
1000$0.478777$478.777

NVTJD4001NT1G Product Details

NVTJD4001NT1G Description


Rohm N-channel and P-channel MOSFETNVTJD4001NT1G have the characteristics of low on-resistance and high switching speed. It has a wide lineup from small signal MOSFET to power MOSFET and can be used in a variety of applications.

NVTJD4001NT1G Features

? Low Gate Charge for Fast Switching

? Small Footprint ? 30% Smaller than TSOP?6

? ESD Protected Gate

? AEC Q101 Qualified ? NVTJD4001N

? These Devices are Pb?Free and are RoHS Compliant


NVTJD4001NT1G Applications


? Low Side Load Switch

? Li?Ion Battery Supplied Devices ? Cell Phones, PDAs, DSC

? Buck Converters

? Level Shifts


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