FDY1002PZ Description
This Dual P-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(on)@VGS = ¨C1.5 V.
FDY1002PZ Features
Max rDS(on) = 0.5 |? at VGS = ¨C4.5 V, ID = ¨C0.83 A
Max rDS(on) = 0.7 |? at VGS = ¨C2.5 V, ID = ¨C0.70 A
Max rDS(on) = 1.2 |? at VGS = ¨C1.8 V, ID = ¨C0.43 A
Max rDS(on) = 1.8 |? at VGS = ¨C1.5 V, ID = ¨C0.36 A
HBM ESD protection level = 1400 V (Note 3)
RoHS Compliant
FDY1002PZ Applications
This product is general usage and suitable for many different applications.
Li-Ion Battery Pack
