FDC6306P Description
These P-channel 2.5V MOSFET are manufactured using an advanced PowerTritch process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications in larger and more expensive SO-8 and TSSOP-8 packages.
FDC6306P Features
-1.9 A, -20 V
RDS(on) = 0.170 |? @ VGS = -4.5 V
RDS(on) = 0.250 |? @ VGS = -2.5 V
Low gate charge (2.3nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT?-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
FDC6306P Applications
This product is general usage and suitable for many different applications.
