IRF8910TRPBF Description
International Rectifier's Fifth Generation HEXFETs have an exceptionally low on-resistance per silicon area thanks to cutting-edge fabrication methods. The designer now has a highly efficient and dependable device for usage in a range of applications thanks to the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely recognized for. The new Micro8 package delivers the smallest footprint of any SOIC design, with a footprint area that is half that of the traditional SO-8. Given that printed circuit board space is at a premium in many applications, the Micro8 is the perfect tool. The Micro8 will effortlessly fit into incredibly small application settings like portable devices and PCMCIA cards because of its low profile (1.1mm).
IRF8910TRPBF Features
RDS(on) is Very Low at 4.5V VGS.
low gate impedance extremely
Voltage and Current Characterized Avalanche in Full
Max. Gate Rating for 20V VGS
IRF8910TRPBF Applications
For POL converters in desktops, servers, graphics cards, game consoles, and set-top boxes, use a dual SO-8 MOSFET.
void of lead
