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SI7232DN-T1-GE3

SI7232DN-T1-GE3

SI7232DN-T1-GE3

Vishay Siliconix

SI7232DN-T1-GE3 Dual N-channel MOSFET Transistor; 24 A; 20V; 8-Pin PowerPAK 1212

SOT-23

SI7232DN-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation23W
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number SI7232
Pin Count8
JESD-30 Code S-XDSO-C6
Number of Elements 2
Operating ModeENHANCEMENT MODE
Power Dissipation2.6W
Case Connection DRAIN
Turn On Delay Time10 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.4m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 10V
Current - Continuous Drain (Id) @ 25°C 25A
Gate Charge (Qg) (Max) @ Vgs 32nC @ 8V
Rise Time10ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.0164Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 11 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.17mm
Length 3.05mm
Width 3.05mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7576 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.374868$3.374868
10$3.183838$31.83838
100$3.003620$300.362
500$2.833604$1416.802
1000$2.673211$2673.211

About SI7232DN-T1-GE3

The SI7232DN-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features SI7232DN-T1-GE3 Dual N-channel MOSFET Transistor; 24 A; 20V; 8-Pin PowerPAK 1212.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7232DN-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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