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NTJD4401NT1G

NTJD4401NT1G

NTJD4401NT1G

ON Semiconductor

NTJD4401NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTJD4401NT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface MountYES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 220mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation270mW
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating630mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NTJD4401N
Pin Count6
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation270mW
Turn On Delay Time83 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 375m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time227ns
Fall Time (Typ) 227 ns
Turn-Off Delay Time 786 ns
Continuous Drain Current (ID) 630mA
Threshold Voltage 920mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 920 mV
Feedback Cap-Max (Crss) 5 pF
Height 990.6μm
Length 2.1844mm
Width 1.3462mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:15776 items

Pricing & Ordering

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NTJD4401NT1G Product Details

NTJD4401NT1G Description


A small signal is an AC signal superimposed on a bias signal (or on a DC constant signal) (more professionally, a signal with a zero average value). Decomposing the signal into two components allows the use of superposition techniques to simplify further analysis.

NTJD4401NT1G Features


? Small Footprint (2 x 2 mm)

? Low Gate Charge N?Channel Device

? ESD Protected Gate

? Same Package as SC?70 (6 Leads)

? AEC?Q101 Qualified and PPAP Capable ? NVJD4401N

? These Devices are Pb?Free and are RoHS Compliant

NTJD4401NT1G Applications


? Load Power Switching

? Li?Ion Battery Supplied Devices

? Cell Phones, Media Players, Digital Cameras, PDAs

? DC?DC Conversion




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