IRF7907TRPBF Description
These HEXFET power MOSFET are designed for automotive applications and are packaged in dual SO-8 packages that use the latest technology to achieve extremely low on-resistance per silicon area. Other features of these automotive certified HEXFET power MOSFET include 150 °C junction operating temperature, fast switching speed and improved repeated avalanche ratings. The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capabilities, making it an ideal choice for a variety of power applications. This dual surface mount SO-8 can greatly reduce circuit board space, and can also be used in magnetic tapes and reels.
IRF7907TRPBF Features
· Advanced Planar Technology
· Ultra Low On-Resistance
· Logic Level Gate Drive
· Dual N and P Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· 150°C Operating Temperature
· Lead-Free, RoHS Compliant
· Automotive Qualified
IRF7907TRPBF Applications
The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications.
