FDS89161 Description
This N-Channel MOSFET is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance and ruggedness.
FDS89161 Features
Shielded Gate MOSFET Technology
Max rDS(on) = 105 mΩat VGS= 10 V, ID = 2.7 A
Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
100% UIL Tested
RoHS Compliant
FDS89161 Applications
This product is general usage and suitable for many different applications.
Synchronous Rectifier
Primary Switch for Bridge Topology
