FDS8858CZ Description
These dual N and P-channel enhanced mode MOSFET are advanced power trench processes produced by on Semiconductor and are tailored to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power loss and FAS switches.
FDS8858CZ Applications
inverter
Synchronous Buck
FDS8858CZ Features
Q1:N-Channel
Maxrps(on)=17mΩatVGs=10Vp=8.6A
Max ros(on)=20mΩ at VGs=4.5V1=7.3A Q2: P-Channel
Maxrps(on)=20.5mΩatVGs=-10VID=-7.3A
Max rps(on)=34.5mΩatVGs=-4.5V1p=-5.6A
High power and handing capability in a widely used surface mount package
.Fast switching speed
