Name: FDMA1029PZ
Brand: ON Semiconductor
SKU: FDMA1029PZ
Price: 0.92000 USD
Availability: InStock

new-10%

FDMA1029PZ

Manufacturer part number:FDMA1029PZ

Manufacturer:ON Semiconductor

Description:FDMA1029PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMA1029PZ Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Number of Pins	6
Weight	40mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Max Power Dissipation	1.4W
Current Rating	-3.1A
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.4W
Case Connection	DRAIN
Turn On Delay Time	13 ns
Power - Max	700mW
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	95m Ω @ 3.1A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	11ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	3.1A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.095Ohm
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	-1 V
Height	750μm
Length	2mm
Width	2mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDMA1029PZ Product Details

FDMA1029PZ Description

The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications, with two independent P-channel MOSFET with low on-resistance, minimizing conduction loss. Two-way flow is possible.

The MicroFET 2x2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.