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NSVMMBTA05LT1G

NSVMMBTA05LT1G

NSVMMBTA05LT1G

ON Semiconductor

NSVMMBTA05LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVMMBTA05LT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation225mW
Power - Max 225mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage60V
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:18270 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.895543$0.895543
10$0.844851$8.44851
100$0.797029$79.7029
500$0.751915$375.9575
1000$0.709354$709.354

NSVMMBTA05LT1G Product Details

NSVMMBTA05LT1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).When collector current reaches its maximum, it can reach 500mA volts.

NSVMMBTA05LT1G Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA

NSVMMBTA05LT1G Applications


There are a lot of ON Semiconductor NSVMMBTA05LT1G applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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